| # | Country | Total Patents | |
|---|---|---|---|
| #1 | WIPO (World Intellectual Property Organization) | 7 | |
| #2 | Australia | 4 | |
| #3 | China | 3 | |
| #4 | EPO (European Patent Office) | 3 | |
| #5 | United States | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Computer technology | |
| #3 | Digital networks | |
| #4 | Telecommunications | |
| #5 | Machines |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Static stores | |
| #3 | Digital information transmission | |
| #4 | Transmission | |
| #5 | Unspecified technologies |
| # | Name | Total Patents |
|---|---|---|
| #1 | Lu Tao Cheng | 8 |
| #2 | Wang Mam Tsung | 8 |
| #3 | Lung Hsiang Lan | 6 |
| #4 | Chang Yao Wen | 4 |
| #5 | Chang Yun | 4 |
| #6 | Liu Chang-Chi | 3 |
| #7 | Lee Jung-Yu | 2 |
| #8 | Shyu Der Shin | 2 |
| #9 | Su Ming-Chang | 2 |
| #10 | Tsai Wen-Jer | 2 |
| Publication | Filing date | Title |
|---|---|---|
| WO0117030A1 | Non-volatile memory structure for twin-bit storage and methods of making same | |
| WO0116999A2 | New approach for multilevel mrom | |
| CN1327615A | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate | |
| CN1375114A | Easy shrinkable novel non-volatile semiconductor memory cell utilizing split dielectric floating gate and method for making same | |
| US6018526A | Bridge device with self learning between network media and integrated circuit and method based on the same |