LASER SYSTEMS & SOLUTIONS OF EUROPE has a total of 46 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 2013. It filed its patents most often in EPO (European Patent Office), Taiwan and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, optics and electrical machinery and energy are ELECTROTECH EQUIPMENTS LTD, FITTECH CO LTD and GMEMS CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 14 | |
#2 | Taiwan | 10 | |
#3 | WIPO (World Intellectual Property Organization) | 8 | |
#4 | United States | 6 | |
#5 | Republic of Korea | 4 | |
#6 | China | 2 | |
#7 | Singapore | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Optics | |
#3 | Electrical machinery and energy | |
#4 | Chemical engineering | |
#5 | Measurement | |
#6 | Machine tools | |
#7 | Medical technology |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Devices using light amplification | |
#3 | Electric discharge tubes | |
#4 | Plasma technique | |
#5 | Measuring light | |
#6 | Soldering, welding and flame cutting | |
#7 | Optical systems | |
#8 | X-ray technique |
# | Name | Total Patents |
---|---|---|
#1 | Mazzamuto Fulvio | 26 |
#2 | Ceccato Paul | 12 |
#3 | Huet Karim | 6 |
#4 | Perrot Sylvain | 5 |
#5 | Besaucele Hervé | 4 |
#6 | Mestres Marc | 4 |
#7 | Dutems Cyril | 4 |
#8 | Besaucele Herve | 3 |
#9 | Pinsard Bastien | 2 |
#10 | Chastan Nicolas | 2 |
Publication | Filing date | Title |
---|---|---|
EP3761344A1 | System and method for spatially controlling an amount of energy delivered to a processed surface of a substrate | |
EP3667704A1 | Method for thermally processing a substrate and associated system | |
EP3611757A1 | Method for forming a doped region on a semiconductor material | |
EP3514821A1 | Method of laser irradiation of a patterned semiconductor device | |
EP3495790A1 | Apparatus and method for measuring the surface temperature of a substrate | |
TWI651748B | Low pressure wire ion plasma discharge source, and application to electron source with secondary emission | |
TWI642092B | Deep junction electronic device and process for manufacturing thereof | |
EP3370251A1 | Method for forming a shallow junction in a semiconductor substrate | |
EP3252800A1 | Deep junction electronic device and process for manufacturing thereof | |
EP3196918A1 | Pulsed x-ray source comprising a low pressure wire ion plasma discharge source | |
EP3131112A1 | Method for forming an ohmic contact on a back-side surface of a silicon carbide substrate |