Voltage-controlled oscillator with lc resonant circuit
US6358823B1
Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom
DE10004387A1
CMOS compatible lateral DMOS transistor has drift space region depleted of free charge carriers if drain voltage lower than gate isolator breakdown voltage
DE10013633A1
Static frequency divider with switchable division ratio prevents metastable states using two D=type flip-flops with alternately activatable inputs
DE10005405A1
Layer stack used for a silicon-based pnp hetero bipolar transistor in integrated circuits comprises a p-conducting doped collector layer separated from a p-conducting emitter layer by a n-conducting base layer
DE10003951A1
Tunnel diode used in the production of high frequency electronics comprises a silicon buffer layer, silicon semiconductor layers, a silicon intermediate layer and a silicon covering layer formed on a silicon substrate
DE10000645A1
Production of a bipolar transistor comprises applying a dopant of the conducting type of the collector on the lateral side of the inner collector region and adjusting a rise in the collector doping
DE19956122A1
Circuit for temperature stable bias and reference current source has two opposed current mirrors, p-MOS transistor in one path and output current mirrored out via further n-MOS transistor
DE19956123A1
Circuit for temperature stable bias and reference voltage source has n-MOS and p-MOS arranged in pairs to form two opposed current mirrors, further p-MOS transistor in one current path
DE19952631A1
Measurement and evaluation method to determine doping dose in semiconductor structures; involves measuring characteristic curves of capacitance as function of voltage
DE19940278A1
Layer structure for bipolar transistors and method for their production
DE19939700A1
Process for characterizing and improving defect-adhered boundary surfaces in heterostructures on silicon comprises inserting foreign atoms into the heterostructure and detecting by a deep profiling process as boundary surface accumulation
DE19926928A1
Data transmission procedures
DE19925831A1
Process for measuring the positioning errors of structured patterns used in semiconductor production comprises forming test grating structures, and measuring the light bent at the structures
DE19925742A1
Oscillator application in GHz frequency range, has resonant circuit in which inductance is periodically switched in parallel with further inductance via switching device operated with oscillator frequency
DE19915156A1
Process for the production of thin, uniform oxide layers on silicon surfaces
DE19857640A1
Bipolar transistor and process for its manufacture
DE19855164A1
Ion implanted doped layer production, for shallow doping profile production in a highly integrated circuit, comprises subjecting a semiconductor wafer to ultrasound during implantation
DE19855008A1
High quality integrated inductor, for an h.f. circuit, is produced by forming bimetallic strip lead portions which bend, on cooling, to raise a deposited coil from a substrate
DE19855022A1
Mobile telecommunications unit, containing mobile telephone, with improved operational comfort by special software menu
