Learn more

HYNECEK JAROSLAV

Overview
  • Total Patents
    35
About

HYNECEK JAROSLAV has a total of 35 patent applications. Its first patent ever was published in 2002. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, audio-visual technology and transport are ITONAGA KAZUICHIRO, STRATIO INC and SUZUKI RYOJI.

Patent filings in countries

World map showing HYNECEK JAROSLAVs patent filings in countries
# Country Total Patents
#1 United States 35

Patent filings per year

Chart showing HYNECEK JAROSLAVs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hynecek Jaroslav 35
#2 Komori Hirofumi 6
#3 Zhao Xia 3
#4 Joy Thomas 2
#5 Haddad Homayoon 2
#6 Forbes Leonard 2
#7 Agranov Gennadiy 1
#8 Merrill Richard B 1
#9 Martin Russel A 1
#10 Li Xiangli 1

Latest patents

Publication Filing date Title
US2013146747A1 Vertical JFET source follower for small pixel CMOS image sensors
US2013153973A1 Image sensor pixels with junction gate photodiodes
US8785986B1 BCMD image sensor with junction gate for back side or front side illumination
US2012273653A1 Image sensor array for the back side illumination with junction gate photodiode pixels
US2012273654A1 Image sensor array for back side illumination with global shutter using a junction gate photodiode
US8471315B1 CMOS image sensor having global shutter pixels built using a buried channel transfer gate with a surface channel dark current drain
US8946845B1 Stacked pixels for high resolution CMOS image sensors with BCMD charge detectors
US8928792B1 CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing
US8723284B1 Back side illuminated CMOS image sensor with global shutter storage gates stacked on top of pinned photodiodes
US2012205765A1 Image sensors with stacked photo-diodes
US2012181581A1 Back-side-illuminated image sensors with bulk-charge-modulated image sensor pixels
US2012175497A1 Image sensor pixels with back-gate-modulated vertical transistor
US2011249158A1 Image sensor pixels with vertical charge transfer
US2010096718A1 Backside illuminated image sensor
US2007158771A1 Stratified photodiode for high resolution CMOS image sensor implemented with STI technology
US2006203111A1 3T pixel for CMOS image sensors with low reset noise and low dark current generation utilizing parametric reset
US7079178B2 High dynamic range active pixel CMOS image sensor and data processing system incorporating adaptive pixel reset