HUANG TSAI-YU has a total of 11 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States, China and Taiwan. Its main competitors in its focus markets semiconductors and electrical machinery and energy are TELECOMUNICACION ELECTRONICA Y, MAXWELL ELECT COMPONENTS GROUP and IPDIA.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 8 | |
#2 | China | 1 | |
#3 | Taiwan | 1 | |
#4 | WIPO (World Intellectual Property Organization) | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Electrical machinery and energy |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Capacitors and switching devices |
# | Name | Total Patents |
---|---|---|
#1 | Huang Tsai-Yu | 11 |
#2 | Nieh Shin-Yu | 3 |
#3 | Chang Hui-Lan | 2 |
#4 | Bhat Vishwanath | 2 |
#5 | Huang Yi-Feng | 2 |
#6 | Hsieh Chun-I | 2 |
#7 | Carlson Chris | 2 |
#8 | Antonov Vassil | 2 |
#9 | Lin Ching-Kai | 2 |
Publication | Filing date | Title |
---|---|---|
CN103915430A | Three-dimensional stacked structure for chips | |
TW201505153A | Three dimensional stacked structure for wafers and the fabrication method thereof | |
US2014021599A1 | Three-dimensional integrated circuits and fabrication thereof | |
US2012199944A1 | Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same | |
US2012202356A1 | Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures | |
US2012040162A1 | High-k dielectric material and methods of forming the high-k dielectric material |