HERNER S BRAD has a total of 16 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, computer technology and environmental technology are GREENLIANT IP LLC, PATTI ROBERT and FLOADIA CORP.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 14 | |
#2 | WIPO (World Intellectual Property Organization) | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Computer technology | |
#3 | Environmental technology | |
#4 | Micro-structure and nano-technology | |
#5 | Machines |
# | Name | Total Patents |
---|---|---|
#1 | Herner S Brad | 16 |
#2 | Kumar Tanmay | 3 |
#3 | Clark Mark H | 3 |
#4 | Scheuerlein Roy E | 2 |
#5 | Bandyopadhyay Abhijit | 2 |
#6 | Petti Christopher J | 2 |
#7 | Radigan Steven J | 1 |
#8 | Banyopadhyay Abhijit | 1 |
#9 | Walker Andrew J | 1 |
Publication | Filing date | Title |
---|---|---|
US2012208317A1 | Intermetal stack for use in a photovoltaic cell | |
US2011186797A1 | Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same | |
US2010159629A1 | Method to texture a lamina surface within a photovoltaic cell | |
US2009086521A1 | Multiple antifuse memory cells and methods to form, program, and sense the same | |
US2008316795A1 | Method of making nonvolatile memory device containing carbon or nitrogen doped diode | |
US2008316808A1 | Nonvolatile memory device containing carbon or nitrogen doped diode | |
US2008315206A1 | Highly Scalable Thin Film Transistor | |
US2005052915A1 | Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states |