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DALIAN MEIMING EPITAXIAL WAFER TECHNOLOGY CO LTD

Overview
  • Total Patents
    29
About

DALIAN MEIMING EPITAXIAL WAFER TECHNOLOGY CO LTD has a total of 29 patent applications. Its first patent ever was published in 2003. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are VTERA TECHNOLOGY INC, HERUTSU KK and UNITED TEST AND ASSEMBLY CT.

Patent filings in countries

World map showing DALIAN MEIMING EPITAXIAL WAFER TECHNOLOGY CO LTDs patent filings in countries
# Country Total Patents
#1 China 29

Patent filings per year

Chart showing DALIAN MEIMING EPITAXIAL WAFER TECHNOLOGY CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Zhiguo Xiao 15
#2 Xiao Zhiguo 13
#3 Wu Shengli 12
#4 Shengli Wu 10
#5 Xiangdong Chen 9
#6 Tianpeng Yang 6
#7 Li Qianying 5
#8 Baihui Gao 5
#9 Xue Nianliang 5
#10 Sun Yingbo 5

Latest patents

Publication Filing date Title
CN105118900A Growth method for GaN-based LED epitaxial wafer
CN103633196A GaN base LED transparent electrode graphical preparation method
CN103050596A Light emitting diode provided with patterned substrate
CN103117349A High-light AlGaInP light emitting diode (LED) and manufacturing method thereof
CN103078015A Light emitting diode grinding and wax pastingcharging method
CN103022286A Cascaded GaN-based LED (light-emitting diode) epitaxial wafer and preparation method thereof
CN103050593A AlGaInP quaternary light-emitting diode epitaxial wafer and growth method thereof
CN103050599A Light emitting diode provided with outer ring electrode and manufacturing method thereof
CN103022311A GaN-LED (Light-Emitting Diode) chip structure and preparation method thereof
CN103022277A Preparation method of light-emitting diode using pattered substrate
CN103022278A Preparation method of patterned sapphire substrate
CN102185075A Light-emitting diode with bonding reflecting layer and manufacturing method thereof
CN102544272A Light emitting diode chip and manufacturing method thereof
CN102479896A Light emitting diode chip
CN102468382A Preparation method of AlGaInP light-emitting diode on GaAs substrate
CN102376827A Preparation method of AlGaInp light-emitting diode
CN102376735A Integrated light-emitting diode array chip and production method thereof
CN102375134A Calibration method of electrical parameter test of light-emitting diode (LED) finished product
CN102332517A GaN-based LED epitaxial wafer and growing method thereof
CN102208505A Gallium-nitride-based light-emitting diode (LED) epitaxial wafer and growth method thereof