EON SILICON DEVICES INC has a total of 12 patent applications. Its first patent ever was published in 1997. It filed its patents most often in United States, Japan and Taiwan. Its main competitors in its focus markets computer technology, electrical machinery and energy and basic communication technologies are ZMOS TECHNOLOGY INC, DENG XIAOWEI and RAO HARI M.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 10 | |
#2 | Japan | 1 | |
#3 | Taiwan | 1 |
# | Industry | |
---|---|---|
#1 | Computer technology | |
#2 | Electrical machinery and energy | |
#3 | Basic communication technologies | |
#4 | Semiconductors |
# | Technology | |
---|---|---|
#1 | Static stores | |
#2 | AC and DC conversion devices | |
#3 | Semiconductor devices | |
#4 | Electric digital data processing | |
#5 | Pulse technique |
# | Name | Total Patents |
---|---|---|
#1 | Yu James C | 7 |
#2 | Tang Yuan | 6 |
#3 | Su Chien-Sheng | 5 |
#4 | Chan I-Chuin Peter | 3 |
#5 | Kao Chao-Ven | 3 |
#6 | Chen Chih-Liang | 3 |
#7 | Chang Chung K | 2 |
#8 | Chen Jhih-Liang | 1 |
#9 | Anthony Jeffrey W | 1 |
Publication | Filing date | Title |
---|---|---|
US6680257B2 | Alternative related to SAS in flash EEPROM | |
US6490203B1 | Sensing scheme of flash EEPROM | |
US6222771B1 | Unified program method and circuitry in flash EEPROM | |
US6172915B1 | Unified erase method in flash EEPROM | |
US5966330A | Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias | |
US6028780A | Two-phase clock charge pump with power regulation | |
US6023426A | Method of achieving narrow VT distribution after erase in flash EEPROM | |
US6175598B1 | Output noise control scheme for multiple I/O's | |
US5790460A | Method of erasing a flash EEPROM memory |