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DENG XIAOWEI

Overview
  • Total Patents
    17
About

DENG XIAOWEI has a total of 17 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States. Its main competitors in its focus markets computer technology, semiconductors and environmental technology are RAO HARI M, METARAM INC and KO JAE BUM.

Patent filings in countries

World map showing DENG XIAOWEIs patent filings in countries
# Country Total Patents
#1 United States 17

Patent filings per year

Chart showing DENG XIAOWEIs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Deng Xiaowei 17
#2 Loh Wah Kit 9
#3 Houston Theodore W 2
#4 Loh Wah K 2
#5 Seshadri Anand 2
#6 Blake Terence G W 1
#7 Rana Parvinder Kumar 1
#8 Holla Lakshmikantha V 1
#9 Shi Zhonghai 1

Latest patents

Publication Filing date Title
US2013182495A1 Efficient static random-access memory layout
US2013182490A1 Static random access memory cell with single-sided buffer and asymmetric construction
US2013294149A1 Reducing power in SRAM using supply voltage control
US2013021864A1 Array power supply-based screening of static random access memory cells for bias temperature instability
US2013028036A1 Method of screening static random access memories for unstable memory cells
US2012014195A1 SRAM with buffered-read bit cells and its testing
US2012014173A1 Disturb-free static random access memory cell
US2012224414A1 Solid-state memory cell with improved read stability
US2012106225A1 Array-based integrated circuit with reduced proximity effects
US2012014194A1 Memory cell with equalization write assist in solid-state memory
US2011317476A1 Bit-by-bit write assist for solid-state memory
US2011299349A1 Margin testing of static random access memory cells
US2011273946A1 Universal test structures based SRAM on-chip parametric test module and methods of operating and testing
US2011051539A1 Method and structure for SRAM Vmin/Vmax measurement
US2011051540A1 Method and structure for SRAM cell trip voltage measurement
US2010208536A1 Structure and methods for measuring margins in an SRAM bit
US2009175113A1 Characterization of bits in a functional memory