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ENHANCED MEMORY SYSTEMS INC

Overview
  • Total Patents
    26
About

ENHANCED MEMORY SYSTEMS INC has a total of 26 patent applications. Its first patent ever was published in 1993. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets computer technology and environmental technology are NAKAMURA TADAO, YOON SANGYONG and ATO SOLUTION CO LTD.

Patent filings in countries

World map showing ENHANCED MEMORY SYSTEMS INCs patent filings in countries
# Country Total Patents
#1 United States 19
#2 EPO (European Patent Office) 5
#3 Japan 2

Patent filings per year

Chart showing ENHANCED MEMORY SYSTEMS INCs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Mobley Kenneth J 13
#2 Peters Michael 9
#3 Bondurant David 7
#4 Alwais Michael 5
#5 Grieshaber Bruce 4
#6 Mobley Kenneth 4
#7 Sartore Ronald H 4
#8 Fisch David 4
#9 Carrigan Donald G 4
#10 Jones Oscar Frederick 2

Latest patents

Publication Filing date Title
US6501698B1 Structure and method for hiding DRAM cycle time behind a burst access
US6538928B1 Method for reducing the width of a global data bus in a memory architecture
US6373751B1 Packet-based integrated circuit dynamic random access memory device incorporating an on-chip row register cache to reduce data access latencies
US6278646B1 Multi-array memory device, and associated method, having shared decoder circuitry
US6151236A Enhanced bus turnaround integrated circuit dynamic random access memory device
US6330636B1 Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank
US6249840B1 Multi-bank ESDRAM with cross-coupled SRAM cache registers
US6055192A Dynamic random access memory word line boost technique employing a boost-on-writes policy
US6064620A Multi-array memory device, and associated method, having shared decoder circuitry
US5963481A Embedded enhanced DRAM, and associated method
US6141281A Technique for reducing element disable fuse pitch requirements in an integrated circuit device incorporating replaceable circuit elements
US5991851A Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
US5835442A EDRAM with integrated generation and control of write enable and column latch signals and method for making same
US5875451A Computer hybrid memory including DRAM and EDRAM memory components, with secondary cache in EDRAM for DRAM
EP0552667A1 Enhanced dram with embedded registers