|
WO2019175471A1
|
|
Surface mesfet
|
|
EP3724928A1
|
|
Photosensitive field-effect transistor
|
|
GB201819524D0
|
|
P-I-N photodetector
|
|
EP3701570A1
|
|
Photosensitive field-effect transistor
|
|
GB201816609D0
|
|
Multispectral photodetector array
|
|
EP3655991A1
|
|
Back side illuminated photodetector for cmos imaging sensor with photoactive layer in a cavity
|
|
GB201804607D0
|
|
Photosensitive device with electric shutter
|
|
GB201801336D0
|
|
Voltage-mode photosensitive device
|
|
GB201718408D0
|
|
Photosensitive field-effect transistor
|
|
EP3258514A1
|
|
A method of forming an apparatus comprising perovskite
|
|
EP3252831A1
|
|
A quantum dot photodetector apparatus and associated methods
|
|
EP3243794A1
|
|
A method of making an array of sensor pixels, and associated apparatus and methods
|
|
EP3244442A1
|
|
A method of forming a device comprising quantum dots
|
|
EP3240044A1
|
|
Apparatus and associated methods for reducing noise of photodetectors
|
|
EP3176574A1
|
|
A sensor apparatus and associated methods
|
|
EP3174108A1
|
|
A quantum dot photodetector apparatus and associated methods
|
|
EP3136445A1
|
|
A method for forming apparatus comprising two dimensional material
|
|
EP3015834A1
|
|
An apparatus and method for sensing
|
|
EP3070741A1
|
|
An apparatus comprising a sensor arrangemenet and associated fabrication method
|
|
EP3053743A1
|
|
Quantum dot methods
|
