Learn more

DALIAN XINGUAN TECH CO LTD

Overview
  • Total Patents
    16
  • GoodIP Patent Rank
    105,881
  • Filing trend
    ⇧ 300.0%
About

DALIAN XINGUAN TECH CO LTD has a total of 16 patent applications. It increased the IP activity by 300.0%. Its first patent ever was published in 2016. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, measurement and optics are YESPOWERTECHNIX CO LTD, HUBEI TECH SEMICONDUCTORS CO LTD and ZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD.

Patent filings in countries

World map showing DALIAN XINGUAN TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 16

Patent filings per year

Chart showing DALIAN XINGUAN TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Ronghua 15
#2 Liang Huinan 11
#3 Gao Jun 10
#4 Ren Yongshuo 8
#5 Cheng Wanxi 4
#6 Li Qiang 3
#7 Song Shukuan 3
#8 Jiang Renbo 3
#9 Wang Hongzhou 1
#10 Xiong Huayan 1

Latest patents

Publication Filing date Title
CN111337807A High-frequency high-voltage dynamic on-resistance test circuit and measurement method of switching device
CN111312585A Epitaxial layer growth method of low dislocation density nitride
CN110246890A The epitaxial structure of HEMT device
CN109814020A Power semiconductor power circulation test system
CN109490743A Semiconductor crystal wafer PCM test method
CN109585326A The vertical leakage current of gallium nitride epitaxial slice and Hall effect composite test method
CN109346513A The nitride epitaxial layer and preparation method thereof of crystal quality and pressure-resistant performance can be improved
CN109378270A The preparation method of the more field plates of power device
CN109308999A The method that selective etch prepares the more field plates of power device
CN108803261A The metallic pattern processing method for facilitating single layer positive photoresist to remove
CN108831922A GaN HEMT device and preparation method with GaAs and GaN composite channel
CN108598162A Enhanced GaN HEMT and preparation method with polarization matching barrier layer
CN108493233A The GaN HEMT devices that conducting resistance improves operational reliability can be reduced
CN108091687A GaNHEMT and preparation method with plasma passivation layer
CN107910244A Using silicon graphics substrate growth epitaxy of gallium nitride method
CN106449746A GaN HEMT (High Electron Mobility Transistor) capable of improving current collapse effect