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D2S INC

Overview
  • Total Patents
    192
  • GoodIP Patent Rank
    23,713
  • Filing trend
    ⇩ 40.0%
About

D2S INC has a total of 192 patent applications. It decreased the IP activity by 40.0%. Its first patent ever was published in 2005. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets optics, electrical machinery and energy and micro-structure and nano-technology are FUJIMURA AKIRA, ASELTA NANOGRAPHICS and NIPPON CONTROL SYS CORP.

Patent filings per year

Chart showing D2S INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Fujimura Akira 154
#2 Zable Harold Robert 39
#3 Hagiwara Kazuyuki 31
#4 Mitsuhashi Takashi 28
#5 Tucker Michael 27
#6 Bork Ingo 26
#7 Glasser Lance 18
#8 Pearman Ryan 16
#9 Pack Robert C 13
#10 Aadamov Anatoly 13

Latest patents

Publication Filing date Title
US2020272865A1 Methods and systems to classify features in electronic designs
US2020051781A1 Methods and systems for forming a pattern on a surface using multi-beam charged particle beam lithography
US10748744B1 Method and system for determining a charged particle beam exposure for a local pattern density
US2020201286A1 Method and system of reducing charged particle beam write time
US2019197213A1 Modeling of a design in reticle enhancement technology
KR20190063244A Visual Monitoring System
US2018074393A1 Sub-resolution assist features in semiconductor pattern writing
US2017371246A1 Bias correction for lithography
US2017124247A1 Shaped beam lithography including temperature effects
US2016195805A1 Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US2016103390A1 Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
TW201539117A Method for forming a pattern on a surface using multi-beam charged particle beam lithography
US2015104737A1 Method and system for forming non-manhattan patterns using variable shaped beam lithography
US2014353526A1 Method and system for forming high accuracy patterns using charged particle beam lithography
US2014359542A1 Method and system for dimensional uniformity using charged particle beam lithography
US2014229904A1 Method and system for forming patterns with charged particle beam lithography
US9280634B1 Regularization method for quantizing lithography masks
JP2014195071A Method and system for fracturing or master data preparation of semiconductor device layout design, and method for forming semiconductor layout pattern on reticle
US2014158916A1 Method and system for forming a pattern on a reticle using charged particle beam lithography
US2014162466A1 Method and system for forming a pattern on a reticle using charged particle beam lithography