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CT THERM SITEC GMBH

Overview
  • Total Patents
    74
About

CT THERM SITEC GMBH has a total of 74 patent applications. Its first patent ever was published in 2006. It filed its patents most often in Germany, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets surface technology and coating, materials and metallurgy and electrical machinery and energy are MIKROKEMIA OY, NIPPON BIITEC KK and APPLIED EPI INC.

Patent filings per year

Chart showing CT THERM SITEC GMBHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Vollmar Wilfried 22
#2 Hoess Christian 12
#3 Hussy Stephan 12
#4 Grundmann Frank 10
#5 Prokopenko Oleksandr 8
#6 Leck Michael 8
#7 Stubhan Frank 7
#8 Kloos Ralf 6
#9 Wilfried Vollmar 5
#10 Mozer Albrecht 3

Latest patents

Publication Filing date Title
DE102013014335A1 Method and device for coating a reactor vessel and a reactor vessel
DE102013105607A1 Apparatus, used to produce silicon, includes bottom plate with first passages and electrodes, cover and gas-tight closable opening for introducing pre-heater in reaction chamber, which includes second passage and sliding contact element
DE102012103756A1 Lowering the temperature prevailing in a reaction zone of a trichlorosilane-synthesis reactor, comprises introducing a liquid chlorosilane into the reaction zone
DE102012103755A1 Synthesizing trichlorosilane, comprises converting metallic silicon and hydrogen chloride in reactor using aluminum as a catalyst, recycling aluminum chloride in the reactor leaked out from reactor, and reusing recycled aluminum chloride
DE102011120210A1 Preparing pure silicon, useful as raw material in e.g. solar industry, comprises introducing silicon containing gas, as input gas, into a upstream reactor and depositing hot separated bodies, which are silicons, on reactor surfaces
DE102011119353A1 Crushing semiconductor molding, comprises producing semiconductor molding having cavity, filling cavity with liquid having density anomaly effect, and cooling liquid below freezing point for producing pressure in cavity
DE102011117552A1 Device and method for applying a voltage to a variety of silicon bars in a cvd reactor
DE102011115782A1 Reactor with coated reactor vessel and coating process
DE102011113484A1 Separation device, useful for firing a silicon body in a separator actuator, comprises an attachment unit comprising the silicon body connectable with electrodes of the actuator, and heating device comprising a resistance heating element
CN103080387A Process and apparatus for manufacturing polycrystalline silicon ingots
DE102011008854A1 Method for cutting semiconductor material e.g. silicon wafer, involves passivating semiconductor material by supplying microwave energy in presence of oxygen-containing gas atmosphere
DE102010056021B3 Nozzle assembly useful in a chemical vapor deposition reactor, comprises a nozzle body having an inlet, an outlet and a flow space between the inlet and outlet, and a control unit having an adjusting member and a fixing part
DE102010048602A1 Crucible for silicon, crucible arrangement and separation unit for a crucible
DE102010045041A1 CVD reactor / gas converter and electrode unit therefor
DE102010045040A1 Method and apparatus for producing silicon
DE102010032103A1 Method and apparatus for igniting silicon rods outside a CVD reactor
DE102010031819A1 Method and device for producing polycrystalline silicon blocks
DE102010026923A1 Recovering silicon from a saw suspension comprising silicon and cutting particles in a cooling fluid, useful e.g. in solar cell industry, comprises separation of silicon particle and cutting particles by sink-float separation method
DE102010024010A1 Method and device for producing polycrystalline silicon blocks
DE102010029496A1 Method for energy supply of a load in a deposition process, comprises providing first and second electrical variables by a first and second controllable electric ignition means, where the electrical variables differ itself in its amounts