CORNER STAR LTD has a total of 61 patent applications. It increased the IP activity by 0.0%. Its first patent ever was published in 2011. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets surface technology and coating, machines and materials and metallurgy are SICRYSTAL AG, WACKER NSCE CORP and SARAYAMA SEIJI.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 29 | |
#2 | WIPO (World Intellectual Property Organization) | 9 | |
#3 | EPO (European Patent Office) | 7 | |
#4 | Republic of Korea | 6 | |
#5 | Taiwan | 6 | |
#6 | China | 4 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Machines | |
#3 | Materials and metallurgy | |
#4 | Chemical engineering | |
#5 | Semiconductors | |
#6 | Environmental technology | |
#7 | Mechanical elements |
# | Name | Total Patents |
---|---|---|
#1 | Zepeda Salvador | 19 |
#2 | Phillips Richard J | 11 |
#3 | Luers Christopher Vaughn | 10 |
#4 | Kimbel Steven Lawrence | 9 |
#5 | Mehdizadeh Dehkordi Arash | 7 |
#6 | Haringer Stephan | 7 |
#7 | Sreedharamurthy Hariprasad | 6 |
#8 | Zardoni Marco | 6 |
#9 | Swaminathan Tirumani N | 6 |
#10 | Holzer Joseph Conrad | 6 |
Publication | Filing date | Title |
---|---|---|
CN111527241A | Synthetic lined crucible assembly for Czochralski crystal growth | |
WO2019133343A1 | Methods for removing a melt of silicon from a crucible and related wick assemblies | |
CN111511965A | Hybrid crucible assembly for pulling crystal growth | |
WO2018064384A1 | Telescoping expansion bellows | |
WO2018064388A1 | Expansion bellows with self-aligned guide rods | |
US2018093239A1 | Fluidized bed reactor including liner | |
US2018087179A1 | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots | |
US2018320287A1 | Crystal pulling system and method including crucible and barrier | |
US2018347071A1 | Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process | |
US2018291524A1 | Methods for producing single crystal ingots doped with volatile dopants | |
US2017370470A1 | Fluid conveyance system gasket assembly and methods of assembling the same |