THIRD DIMENSION 3D SC INC has a total of 35 patent applications. Its first patent ever was published in 1997. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors are INFINEON TECHNOLOGIES BIPOLAR GMBH & CO KG, KAO CHING-HUNG and SHANGHAI ADVANCED SEMICONDUCTOR MFG CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 18 | |
#2 | WIPO (World Intellectual Property Organization) | 6 | |
#3 | EPO (European Patent Office) | 5 | |
#4 | Taiwan | 4 | |
#5 | China | 1 | |
#6 | Japan | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors |
# | Technology | |
---|---|---|
#1 | Semiconductor devices |
# | Name | Total Patents |
---|---|---|
#1 | Hshieh Fwu-Iuan | 22 |
#2 | Pratt Brian D | 11 |
#3 | Blanchard Richard A | 6 |
#4 | So Koon Chong | 5 |
#5 | Chen Xingbi | 2 |
#6 | Chen Xing-Bi | 2 |
#7 | Hshieh Fwu-Luan | 2 |
#8 | Pratt Brain D | 1 |
#9 | Fwu-Iuan Hshieh | 1 |
Publication | Filing date | Title |
---|---|---|
US2006134867A1 | Technique for forming the deep doped regions in superjunction devices | |
US2006226494A1 | Tungsten plug drain extension | |
TW200629429A | Process for high voltage superjunction termination | |
WO2005060676A2 | A method for manufacturing a superjunction device with wide mesas | |
EP1721344A2 | Method of manufacturing a superjunction device | |
WO2005065140A2 | Method of manufacturing a superjunction device with conventional terminations | |
EP1706899A2 | Planarization method of manufacturing a superjunction device | |
US2005139914A1 | Method for forming thick dielectric regions using etched trenches | |
US6635906B1 | Voltage sustaining layer with opposite-doped islands for semi-conductor power devices |