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CHERN CHAN-HONG

Overview
  • Total Patents
    17
About

CHERN CHAN-HONG has a total of 17 patent applications. Its first patent ever was published in 2010. It filed its patents most often in United States. Its main competitors in its focus markets basic communication technologies, computer technology and semiconductors are SEIKO NPC CORP, KEYSTONE SEMICONDUCTOR INC and SILEGO TECHNOLOGY INC.

Patent filings in countries

World map showing CHERN CHAN-HONGs patent filings in countries
# Country Total Patents
#1 United States 17

Patent filings per year

Chart showing CHERN CHAN-HONGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chern Chan-Hong 17
#2 Hsueh Fu-Lung 14
#3 Lin Chih-Chang 12
#4 Huang Ming-Chieh 10
#5 Chung Tao Wen 5
#6 Swei Yuwen 5
#7 Huang Tsung-Ching 2
#8 Pu Chiang 2
#9 Huang Tsung-Ching Jim 1
#10 Sheffield Bryan 1

Latest patents

Publication Filing date Title
US2014038085A1 Automatic misalignment balancing scheme for multi-patterning technology
US2014028407A1 Reconfigurable and auto-reconfigurable resonant clock
US2013342247A1 Capactive load PLL with calibration loop
US8432204B1 Current-controlled oscillator (CCO) based PLL
US2013126979A1 Integrated circuits with electrical fuses and methods of forming the same
US2013082754A1 Phase locked loop calibration
US2012266126A1 Systems and methods of designing integrated circuits
US2012230457A1 Clock and data recovery using LC voltage controlled oscillator and delay locked loop
US2012217586A1 Integrated circuits with resistors and methods of forming the same
US2012050930A1 VOL up-shifting level shifters
US2012044008A1 Level shifters having diode-connected devices for input-output interfaces
US2012019302A1 Low minimum power supply voltage level shifter
US2011267107A1 Circuit for reducing negative bias temperature instability
US2010271246A1 Providing linear relationship between temperature and digital code
US2011199063A1 Integrated circuits including an LC tank circuit and operating methods thereof
US2010223585A1 Dummy fill to reduce shallow trench isolation (STI) stress variation on transistor performance