|
CN108133966A
|
|
A kind of silicon carbide SBD device structure cell for being integrated with periphery RCsnubber structures
|
|
CN108172609A
|
|
Silicon carbide suspension node MOSFET device with periphery deep trench protection ring and ground loop
|
|
CN107994009A
|
|
A kind of SiCMOSFET devices of integrated temperature inductor
|
|
CN107742646A
|
|
It is a kind of that there is the carborundum flat-grid MOSFET component structure cell for burying the knot that suspends
|
|
CN106967386A
|
|
A kind of aqueous silicon carbide wafer lapping liquid and preparation method thereof
|
|
CN106784011A
|
|
Carborundum UMOSFET device structure cells with surge voltage from pressing down and from overvoltage protection
|
|
CN106784054A
|
|
A kind of ultraviolet avalanche photodiode detector and its detection method
|
|
CN106876485A
|
|
Double trench MOSFET devices of a kind of SiC of integrated schottky diode and preparation method thereof
|
|
CN106784008A
|
|
A kind of SiC MOSFET elements of integrated schottky diode
|
|
CN106783851A
|
|
SiCJFET devices of integrated schottky diode and preparation method thereof
|
|
CN106747666A
|
|
A kind of preparation method of high-temperaure coating
|
|
CN106771945A
|
|
A kind of IGBT junction temperatures on-line monitoring method and its measuring circuit
|
|
CN106771946A
|
|
A kind of IGBT module inside chip method for testing junction temperature
|
|
CN105931950A
|
|
Silicon carbide high-voltage MPS diode manufacturing method
|
|
CN105922465A
|
|
Method for cutting large-size silicon carbide bodies in mortar
|
|
CN105696082A
|
|
Method for annealing in furnace during growth of silicon carbide single crystals by PVT method
|
|
CN105696079A
|
|
Method for precisely controlling 6-inch silicon carbide monocrystalline growth temperature field
|
|
CN105696069A
|
|
Method of seed bonding in silicon carbide monocrystal growth
|
|
CN104941387A
|
|
Gas filtering device for single crystal furnace vacuum system
|
