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CAI MING

Overview
  • Total Patents
    36
  • GoodIP Patent Rank
    172,333
  • Filing trend
    ⇩ 100.0%
About

CAI MING has a total of 36 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2001. It filed its patents most often in United States, China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, machines and mechanical elements are KANG PIL-KYU, NAT CENTER FOR ADVANCED PACKAGING CO LTD and FOSHAN NATIONSTAR PHOTOELECTRIONICS CO LTD.

Patent filings in countries

World map showing CAI MINGs patent filings in countries
# Country Total Patents
#1 United States 20
#2 China 15
#3 WIPO (World Intellectual Property Organization) 1

Patent filings per year

Chart showing CAI MINGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Cai Ming 33
#2 Yeh Chun-Chen 12
#3 Guo Dechao 12
#4 Kulkarni Pranita 4
#5 Song Liyang 3
#6 Ozcan Ahmet S 3
#7 Wang Peng 1
#8 Lide Ming 1
#9 Champaigne Denis 1
#10 Wang Ruibo 1

Latest patents

Publication Filing date Title
CN111503230A Multi-stage speed change gear box
CN110122945A A kind of transformable clothes
CN110229404A A kind of preparation method of degradable beam mouth refuse bag
CN110126350A Beam mouth rubbish bag forming device and its production technology
CN110228183A PVC hard shell forms cutting means and moulding process
CN111773160A Eyebrow tattooing dye solution with high repairability and eyebrow tattooing method
CN106555867A A kind of gearbox
CN105992509A Novel protector against electromagnetic radiation of display
CN105982429A Novel water spraying type healthy toothbrush
CN104019275A Hall type valve location measuring device based on linear measurement principle
CN103792030A Hall pressure transmitter
CN103808390A Hall-type power-driven float-bowl liquid level transmitter
CN103727303A Hall type intelligent valve positioner
CN103727872A Hall type angle displacement measurement device
US2013264653A1 Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulators
US8492218B1 Removal of an overlap of dual stress liners
US2013207194A1 Transistors with uniaxial stress channels
US2013200468A1 Integration of SMT in replacement gate FINFET process flow
US2013175632A1 Reduction of contact resistance and junction leakage
US2013175620A1 FinFET with fully silicided gate