|
TW200701487A
|
|
LED structure for flip-chip package and method thereof
|
|
US2006017060A1
|
|
Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
|
|
TW200423442A
|
|
Method for producing vertical interconnection nitride device
|
|
TW200625701A
|
|
Structure for increasing the light-emitting efficiency of a light-emitting device
|
|
TW200419832A
|
|
Structure for increasing the light-emitting efficiency of a light-emitting device
|
|
TW200623473A
|
|
Structure for increasing the light-emitting efficiency of a light-emitting device
|
|
JP2005268642A
|
|
Method for forming light emitting diode having metallic base
|
|
TW200414377A
|
|
Method for forming die protecting layer
|
|
US6884646B1
|
|
Method for forming an LED device with a metallic substrate
|
|
TWI224876B
|
|
Method for forming an LED device with a metallic substrate
|
|
US6963167B2
|
|
Electrode structure for a light-emitting element
|
|
US2005105878A1
|
|
Method for forming an opto-electronic device
|
|
TW200306020A
|
|
Light-emitting device and forming method thereof
|
|
CN1492520A
|
|
Al-Ga-In-P light-emitting diode module
|
|
US6853012B2
|
|
AlGaInP light emitting diode
|
|
TW561564B
|
|
Flip-chip like light emitting device package
|
|
TW560093B
|
|
AlGaInP light emitting diode
|
|
TW550840B
|
|
Light emitting diode device
|
|
US6890781B2
|
|
Transparent layer of a LED device and the method for growing the same
|
|
TW561631B
|
|
Transparent layer of a LED device and the method for growing the same
|
