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AVALANCHE TECHNOLOGY INC

Overview
  • Total Patents
    244
  • GoodIP Patent Rank
    9,544
  • Filing trend
    ⇩ 42.0%
About

AVALANCHE TECHNOLOGY INC has a total of 244 patent applications. It decreased the IP activity by 42.0%. Its first patent ever was published in 2007. It filed its patents most often in United States, EPO (European Patent Office) and China. Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are SANDISK TECHNOLOGIES INC, SHAEFFER IAN and SK HYNIX INC.

Patent filings in countries

World map showing AVALANCHE TECHNOLOGY INCs patent filings in countries

Patent filings per year

Chart showing AVALANCHE TECHNOLOGY INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Huai Yiming 86
#2 Zhou Yuchen 63
#3 Keshtbod Parviz 56
#4 Nemazie Siamack 52
#5 Abedifard Ebrahim 46
#6 Wang Zihui 42
#7 Ranjan Rajiv Yadav 38
#8 Gan Huadong 36
#9 Asnaashari Mehdi 36
#10 Satoh Kimihiro 29

Latest patents

Publication Filing date Title
US2020227628A1 Magnetic memory element incorporating perpendicular enhancement layer
US2019378552A1 Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)
US10818731B1 Three-dimensional nonvolatile memory
US2019198566A1 Multilayered seed structure for magnetic memory element including a CoFeB seed layer
US2020251155A1 Fast programming of magnetic random access memory (MRAM)
US2019172871A1 Selector Device Incorporating Conductive Clusters for Memory Applications
US2020135250A1 Magnetic memory and method for using the same
US2019013056A1 Transient Sensing of Memory Cells
US2019006414A1 Magnetic memory element with multilayered seed structure
US2020006422A1 Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the Same
US2019378553A1 Power-efficient programming of magnetic memory
US10395710B1 Magnetic memory emulating dynamic random access memory (DRAM)
US2019288031A1 Magnetic memory incorporating dual selectors
US2018240845A1 Magnetic memory cell including two-terminal selector device
US2017352701A1 Magnetic structure with multilayered seed
US2018358547A1 Method for manufacturing magnetic memory cells
US10127960B1 Transient Sensing of Memory Cells
US10008663B1 Perpendicular magnetic fixed layer with high anisotropy
US2018240844A1 Selector device having asymmetric conductance for memory applications
US2017140805A1 Fast programming of magnetic random access memory (MRAM)