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ANDO TAKASHI

Overview
  • Total Patents
    52
  • GoodIP Patent Rank
    208,038
  • Filing trend
    0.0%
About

ANDO TAKASHI has a total of 52 patent applications. It increased the IP activity by 0.0%. Its first patent ever was published in 1975. It filed its patents most often in United States, Japan and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, machines and optics are KOBAYASHI HAJIME, MARINE INSTR CO LTD and ZHANGJIAGANG CASS SEMICONDUCTOR CO LTD.

Patent filings in countries

World map showing ANDO TAKASHIs patent filings in countries

Patent filings per year

Chart showing ANDO TAKASHIs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Ando Takashi 45
#2 Narayanan Vijay 16
#3 Kwon Unoh 8
#4 Andou Takashi 7
#5 Ogino Masahiko 6
#6 Komoriya Susumu 6
#7 Yamashita Tenko 5
#8 Miyauchi Akihiro 5
#9 Choi Kisik 4
#10 Frank Martin M 3

Latest patents

Publication Filing date Title
JP2019038693A Shaft bearing damage detection device of conveyor roller and shaft bearing damage detection member used for the same
JP2019003923A Large capacity secondary battery composed of activated carbon electrode derived from bioresources
JP2015023019A Carbon electrode storage battery including hydrogen and halogen element ion as active material
US8659077B1 Multi-layer work function metal replacement gate
US2014042546A1 Structure and method to form input/output devices
US2014004674A1 Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material
US2014004695A1 Scavenging metal stack for a high-K gate dielectric
US2013175630A1 Replacement gate structure for transistor with a high-K gate stack
US2013161763A1 Source-drain extension formation in replacement metal gate transistor device
US2013154019A1 Low threshold voltage CMOS device
US2012155931A1 Fusing device and image forming apparatus using the same
US2013093019A1 FinFET parasitic capacitance reduction using air gap
US2013009257A1 Replacement metal gate with a conductive metal oxynitride layer
US2012280288A1 Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
US2012193729A1 Devices and methods to optimize materials and properties for replacement metal gate structures
US2012181630A1 Replacement gate with reduced gate leakage current
US2012139053A1 Replacement gate devices with barrier metal for simultaneous processing
US2011309449A1 Interface-free metal gate stack
US2011309455A1 Gate-last fabrication of quarter-gap MGHK FET
US2009181505A1 Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device