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ADVANCED ION BEAM TECHNOLOGY I

Overview
  • Total Patents
    33
About

ADVANCED ION BEAM TECHNOLOGY I has a total of 33 patent applications. Its first patent ever was published in 1999. It filed its patents most often in United States, Japan and Taiwan. Its main competitors in its focus markets electrical machinery and energy, semiconductors and surface technology and coating are ACT ADVANCED CIRCUIT TESTING, SEN CORP and SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO LTD.

Patent filings in countries

World map showing ADVANCED ION BEAM TECHNOLOGY Is patent filings in countries

Patent filings per year

Chart showing ADVANCED ION BEAM TECHNOLOGY Is patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chen Jiong 20
#2 White Nicholas R 6
#3 Wan Zhimin 5
#4 Shen Cheng-Hui 5
#5 Lin Wei-Cheng 4
#6 Chen Linuan 3
#7 Jen Ko-Chuan 3
#8 Tang Daniel 3
#9 Chen Jin-Liang 2
#10 Antonissen Eric Henry Jon 1

Latest patents

Publication Filing date Title
US7807986B1 Ion implanter and method for adjusting ion beam
US7709364B1 Method and apparatus for low temperature ion implantation
US7750323B1 Ion implanter and method for implanting a wafer
US7745804B1 Ion implantation method and application thereof
US2009066031A1 Compound sliding seal unit suitable for atmosphere to vacuum applications
US2009090876A1 Implant beam utilization in an ion implanter
US2008029716A1 Apparatus and method for ion beam implantation using ribbon and spot beams
JP2007059395A Ion beam implanting device and method
JP2007059394A Ion beam implanting device and method
JP2006313750A High resolution analyzer magnet with high aspect ratio for ribbon ion beam, and system
JP2006278316A Radiation scanning arm and collimator for series-processing semiconductor wafer with ribbon beam
US2006163490A1 Ion implantation cooling system
TWI287831B Cooling system for ion implantation
US2006113494A1 Apparatus and methods for ion beam implantation using ribbon and spot beams
TW200603301A Method for preventing wafer defect for a batch-type ion implanter spinning direction particle
US2006102080A1 Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities
US6806479B1 Apparatus and method for reducing implant angle variations across a large wafer for a batch disk
US2005019697A1 Method of treating wafers with photoresist to perform metrology analysis using large current e-beam systems
US2004244692A1 Method to accurately and repeatably setup an ion beam for an ion implantation system in reduced setup time to increase productivity
US6946667B2 Apparatus to decelerate and control ion beams to improve the total quality of ion implantation