| # | Country | Total Patents | |
|---|---|---|---|
| #1 | Japan | 4 | |
| #2 | EPO (European Patent Office) | 3 | |
| #3 | China | 1 | |
| #4 | Czechia | 1 | |
| #5 | Germany | 1 | |
| #6 | WIPO (World Intellectual Property Organization) | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Electrical machinery and energy | |
| #3 | Environmental technology |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Climate change mitigation in goods production | |
| #3 | Resistors | |
| #4 | AC and DC conversion devices |
| # | Name | Total Patents |
|---|---|---|
| #1 | Weber Andre | 2 |
| #2 | Zeller Hans-Rudolf | 2 |
| #3 | Galster Norbert | 2 |
| #4 | Bauer Friedhelm | 2 |
| #5 | Linder Stefan | 2 |
| #6 | Kaufmann Stefan | 1 |
| #7 | Dalibor Thomas | 1 |
| #8 | Hagemehster M | 1 |
| #9 | Hofas S | 1 |
| #10 | Oedegard Bjoern | 1 |
| Publication | Filing date | Title |
|---|---|---|
| EP1193768A1 | Process for driving a turn-off power semiconductor device and device for carrying out this process | |
| DE19945639A1 | Insulated gate bipolar transistor (IGBT) arrangement for improved solar radiation resistance, has semiconductor body provided with p-auxiliary base in which several p-bases are arranged |