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WUXI NCE POWER CO LTD

Overview
  • Total Patents
    90
  • GoodIP Patent Rank
    17,068
  • Filing trend
    ⇧ 23.0%
About

WUXI NCE POWER CO LTD has a total of 90 patent applications. It increased the IP activity by 23.0%. Its first patent ever was published in 2011. It filed its patents most often in China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors and control are SHANGHAI GEYI ELECTRONICS CO LTD, TCO CO LTD and JIANGSU SENCHIP MICROELECTRONICS CO LTD.

Patent filings in countries

World map showing WUXI NCE POWER CO LTDs patent filings in countries
# Country Total Patents
#1 China 89
#2 WIPO (World Intellectual Property Organization) 1

Patent filings per year

Chart showing WUXI NCE POWER CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors
#2 Control

Focus technologies

# Technology
#1 Semiconductor devices
#2 Control or regulating systems

Top inventors

# Name Total Patents
#1 Zhu Yuanzheng 90
#2 Zhou Jincheng 35
#3 Ye Peng 32
#4 Li Zongqing 20
#5 Yang Zhuo 15
#6 Liu Jingjing 8
#7 Zhu Jiutao 8
#8 Zhou Yongzhen 7
#9 Zhang Shuo 6
#10 Wang Genyi 4

Latest patents

Publication Filing date Title
CN112216744A High-reliability wide-window super-junction MOSFET structure and manufacturing method
CN112234104A Power semiconductor device, control method, device and system
CN112216743A Trench power semiconductor device and manufacturing method
CN112242447A Super junction power semiconductor structure with high depth-to-width ratio and manufacturing method thereof
CN112086504A High-reliability super-junction power semiconductor structure and manufacturing method
CN111863942A Latch-up prevention high-density cellular power semiconductor device structure and manufacturing method thereof
CN111584621A High-reliability high-density cellular power semiconductor device structure and manufacturing method thereof
CN111599772A Medium-high power semiconductor device with special surface metallization and manufacturing method thereof
CN111584622A Shielding gate power semiconductor device
CN111341843A Composite channel IGBT device and manufacturing method thereof
CN111180521A Semiconductor structure for reducing switching loss and manufacturing method
CN111244170A Insulated gate bipolar transistor device structure with low EMI noise and manufacturing method thereof
CN111211169A Shielded IGBT structure and manufacturing method thereof
CN111312814A Shielding type insulated gate bipolar transistor structure
CN111223915A Multi-time epitaxial super junction device structure and manufacturing method thereof
CN110993683A Power semiconductor device and manufacturing method thereof
CN110600552A Power semiconductor device with fast reverse recovery characteristic and manufacturing method thereof
CN110544725A Power semiconductor device with cut-off ring structure and manufacturing method thereof
CN110416309A A kind of Superjunction power semiconductor device and preparation method thereof
CN110379848A A kind of power semiconductor and preparation method thereof with cut-off ring structure