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VISUAL PHOTONICS EPITAXY CO LTD

Overview
  • Total Patents
    34
  • GoodIP Patent Rank
    56,975
  • Filing trend
    ⇧ 200.0%
About

VISUAL PHOTONICS EPITAXY CO LTD has a total of 34 patent applications. It increased the IP activity by 200.0%. Its first patent ever was published in 1998. It filed its patents most often in United States, Taiwan and China. Its main competitors in its focus markets semiconductors, optics and measurement are ILLEK STEFAN, AUK CORP and XIAMEN QIANZHAO SEMICONDUCTOR TECH CO LTD.

Patent filings in countries

World map showing VISUAL PHOTONICS EPITAXY CO LTDs patent filings in countries
# Country Total Patents
#1 United States 15
#2 Taiwan 10
#3 China 8
#4 Republic of Korea 1

Patent filings per year

Chart showing VISUAL PHOTONICS EPITAXY CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors
#2 Optics
#3 Measurement

Top inventors

# Name Total Patents
#1 Chin Yu-Chung 21
#2 Huang Chao-Hsing 20
#3 Dai Van-Truong 9
#4 Chen Kai-Yu 7
#5 Tseng Min-Nan 7
#6 Jin Yu-Zhong 4
#7 Huang Zhao-Xing 4
#8 Hsiao Hung-Chi 4
#9 Huang Chaoxing 4
#10 Jin Yuzhong 4

Latest patents

Publication Filing date Title
US2021104872A1 Vertical cavity surface emitting laser diode (vcsel) with tunnel junction
US2021091537A1 High-power vertical cavity surface emitting laser diode (vcsel)
US2021075185A1 Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (vcsel) and epitaxial wafer test fixture
CN112242642A Vertical cavity surface emitting laser diode (VCSEL) including AlGaAsP layer with compressive stress
CN112117639A Vertical cavity surface emitting laser diode (VCSEL) with multiple current confinement layers
TW202046588A Semiconductor laser diode
US2020203510A1 High ruggedness heterojunction bipolar transistor
US2020194573A1 Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
CN111341842A Robust heterojunction bipolar transistor structure
US2019372310A1 Laser diode with defect blocking layer
TWI691085B Rugged heterojunction bipolar transistor structure which can effectively increase the breakdown voltage of the emitter-base junction and reduce the capacitance of the emitter-base junction without increasing or slightly increasing the resistance of the emitter
TWI643337B Heterojunction bipolar transistor structure with bandgap graded hole barrier layer especially having a hole barrier layer for improving barrier effect and reducing knee voltage
US2016049502A1 Heterojunction bipolar transistor with blocking layer structure
CN104900688A Directed epitaxial heterojunction bipolar transistor
TW201409687A Bipolar high electron mobility transistor
TW201212228A Heterojunction Bipolar Transistor structure with GaPSbAs base
KR20070014807A High-brightness light emitting diode having reflective layer
TW369731B Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same