| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 6 | |
| #2 | China | 5 | |
| #3 | Taiwan | 3 | |
| #4 | United States | 2 | |
| #5 | Singapore | 1 | |
| #6 | WIPO (World Intellectual Property Organization) | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Optics | |
| #3 | Micro-structure and nano-technology |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Devices using light amplification | |
| #3 | Nanostructure applications |
| # | Name | Total Patents |
|---|---|---|
| #1 | Yuan Shu | 14 |
| #2 | Kang Xuejun | 11 |
| #3 | Lam Jenny | 4 |
| #4 | Wu Daike | 4 |
| #5 | Shu Yuan | 4 |
| #6 | Kang Xue-Jun | 3 |
| #7 | Xuejun Kang | 3 |
| #8 | Ng Tien Khee | 2 |
| #9 | Dake Wu | 2 |
| #10 | Chen Zhen | 2 |
| Publication | Filing date | Title |
|---|---|---|
| WO2009005477A1 | Separation of semiconductor devices | |
| SG148895A1 | Separation of semiconductor devices for light emission | |
| EP1730790A1 | Fabrication of semiconductor devices | |
| CN1998094A | Fabrication of reflective layer on semiconductor light emitting diodes | |
| CN101335321A | Method for manufacturing light emitting device | |
| CN101335320A | Method for manufacturing light emitting device |