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UNI LIGHT TOUCHTEK CORP

Overview
  • Total Patents
    20
About

UNI LIGHT TOUCHTEK CORP has a total of 20 patent applications. Its first patent ever was published in 2003. It filed its patents most often in Taiwan, China and Germany. Its main competitors in its focus markets semiconductors are SAGE WISE 66 PTY LTD, ASB INC and HUNG TZU-CHIEN.

Patent filings in countries

World map showing UNI LIGHT TOUCHTEK CORPs patent filings in countries
# Country Total Patents
#1 Taiwan 8
#2 China 3
#3 Germany 3
#4 Japan 3
#5 Republic of Korea 3

Patent filings per year

Chart showing UNI LIGHT TOUCHTEK CORPs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Lee Ming Shun 6
#2 Chiu Shu-Wei 4
#3 Lee Ming-Shun 4
#4 Chiu Shu Wei 3
#5 Chiou Shu-Woei 2
#6 Wu Bor Jen 2
#7 Lee Yea-Chen 2
#8 Li Ming-Shuen 2
#9 Lee Yea Chen 1
#10 Maizhi Liu 1

Latest patents

Publication Filing date Title
KR20090083637A Semiconductor photo-electronic device and light emitting diode made of the same
DE102008003423A1 Opto-electronic semiconductor element for converting light signal into current signal or current signal into light signal, has substrate, semiconductor layer applied on substrate and multiple electrodes on semiconductor layer
JP2009152229A Semiconductor photoelectric component and light-emitting diode forming same
CN101465319A Method for forming LED element
TW200924234A Semiconductor photoelectric element and light emitting diode made thereof
CN101325229A LED and manufacturing method thereof
TW200849646A Light-emitting diode and manufacturing method thereof
TW200830578A Method for forming light emitting diode devices
TW200830577A Method for manufacturing light emitting diode devices
TW200830576A Method for forming light emitting diode array
TW200705721A Method for manufacturing gallium nitride light emitting diode devices
CN101064352A Method for producing multi-layer metal one-time electrode of luminous diode and its production apparatus
TW200300973A Method for activating p-type semiconductor layer