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TOYOSHIMA SEISAKUSHO KK

Overview
  • Total Patents
    21
  • GoodIP Patent Rank
    220,297
About

TOYOSHIMA SEISAKUSHO KK has a total of 21 patent applications. Its first patent ever was published in 1999. It filed its patents most often in Japan. Its main competitors in its focus markets surface technology and coating, organic fine chemistry and machine tools are GAS PHASE GROWTH LTD, SEASTAR CHEMICALS INC and FEDDERSEN-CLAUSEN OLIVER.

Patent filings in countries

World map showing TOYOSHIMA SEISAKUSHO KKs patent filings in countries
# Country Total Patents
#1 Japan 21

Patent filings per year

Chart showing TOYOSHIMA SEISAKUSHO KKs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Tazaki Yuzo 8
#2 Furuyama Koichi 7
#3 Yoda Koji 5
#4 Sakaki Toshio 3
#5 Saito Tsugio 3
#6 Yoshizawa Hideji 3
#7 Asano Yasuaki 3
#8 Motobayashi Hidefumi 2
#9 Matsumoto Yukimasa 2
#10 Haseyama Hideetsu 2

Latest patents

Publication Filing date Title
JP2019220468A Electrode member, all-solid battery, powder for electrode member, manufacturing method of the electrode member, and manufacturing method of the all-solid battery
JP2015141984A thermoelectric conversion material
JP2011159941A Application solution for oxide thin film formation
JP2011098380A Method of manufacturing steel plate-like component, pole parking and cold forging metallic mold
JP2010065312A Sputtering target
JP2010047829A Sputtering target and manufacturing method thereof
JP2009256762A Sputtering target and method for producing the same
JP2008235843A Perovskite-type oxide resistance-variable material and resistance-variable element
JP2008115453A Zinc oxide based sputtering target
JP2007002275A Material for depositing thin film, thin film deposited using the same, and method for depositing the same
JP2006136931A Manufacturing method of gear member
JP2006136909A Method for manufacturing bar shape member
JP2006063352A Raw material solution for cvd used for producing lanthanoid-based metal-containing thin film and method for producing thin film using the same
JP2006037123A Cvd raw material for thin film, and thin film obtained by using the same
JP2005232580A Split sputtering target
JP2005153410A Method for manufacturing tooth form member and tooth form molding mold
JP2004360058A Cvd ingredient solution and method for producing thin film by using the same
JP2004360059A Cvd ingredient solution and method for vaporizing the same
JP2004256510A Bismuth source solution for chemical vapor deposition and method for forming bismuth-containing thin film using the same
JP2004051619A Raw zirconium material for cvd and method for producing lead titanate zirconate-based thin film