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TOH ENG HUAT

Overview
  • Total Patents
    22
About

TOH ENG HUAT has a total of 22 patent applications. Its first patent ever was published in 2009. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, computer technology and micro-structure and nano-technology are KIYOTOSHI MASAHIRO, WANG CHEN CHIH and KAKOSCHKE RONALD.

Patent filings in countries

World map showing TOH ENG HUATs patent filings in countries
# Country Total Patents
#1 United States 22

Patent filings per year

Chart showing TOH ENG HUATs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Toh Eng Huat 22
#2 Quek Elgin 20
#3 Tan Shyue Seng 10
#4 Tan Chung Foong 8
#5 Lee Jae Gon 7
#6 Tan Shyue Seng Jason 2
#7 Lim Khee Yong 2
#8 Ong Shiang Yang 1
#9 Chu Sanford 1
#10 Yin Chunshan 1

Latest patents

Publication Filing date Title
US2014264228A1 Fin selector with gated RRAM
US2014061576A1 Fin-type memory
US2014048867A1 Multi-time programmable memory
US2014048865A1 Compact charge trap multi-time programmable memory
US2014008713A1 Method and apparatus for embedded NVM utilizing an RMG process
US2013341639A1 Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels
US2013270501A1 RRAM device with an embedded selector structure and methods of making same
US2013240821A1 Three dimensional RRAM device, and methods of making same
US2013221308A1 Compact RRAM device and methods of making same
US2013032869A1 Method and device for a split-gate flash memory with an extended word gate below a channel region
US2013026552A1 Split-gate flash memory exhibiting reduced interference
US2012292707A1 Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates
US2012228705A1 LDMOS with two gate stacks having different work functions for improved breakdown voltage
US2012228695A1 LDMOS with improved breakdown voltage
US2012223394A1 Self-aligned contact for replacement metal gate and silicide last processes
US2012223318A1 P-channel flash with enhanced band-to-band tunneling hot electron injection
US2012171832A1 FinFET with stressors
US2012168913A1 Finfet
US2012038009A1 Methods to reduce gate contact resistance for AC reff reduction
US2012018815A1 Semiconductor device with reduced contact resistance and method of manufacturing thereof