SUMCO PHOENIX CORP has a total of 16 patent applications. Its first patent ever was published in 1999. It filed its patents most often in Japan, Taiwan and Republic of Korea. Its main competitors in its focus markets surface technology and coating, machines and computer technology are SOLAICX INC, CRYSTAL GROWING SYSTEMS GMBH and PV SILICON FORSCHUNGS UND PROD.
# | Country | Total Patents | |
---|---|---|---|
#1 | Japan | 5 | |
#2 | Taiwan | 5 | |
#3 | Republic of Korea | 3 | |
#4 | United States | 2 | |
#5 | EPO (European Patent Office) | 1 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Machines | |
#3 | Computer technology | |
#4 | Measurement | |
#5 | Control | |
#6 | Semiconductors |
# | Name | Total Patents |
---|---|---|
#1 | Orschel Benno | 14 |
#2 | Takanashi Keiichi | 11 |
#3 | Todt Volker | 7 |
#4 | Kearns Joel | 7 |
#5 | Nishimoto Manabu | 3 |
#6 | Buczkowski Andrzej | 3 |
#7 | Madsen Jonathan M | 1 |
#8 | Panczyk Christopher A | 1 |
#9 | Fukuto Nobuo | 1 |
#10 | Todt Volker R | 1 |
Publication | Filing date | Title |
---|---|---|
JP2011057545A | Method for correcting speed deviation between actual and nominal pull speed during crystal growth | |
JP2011001262A | Method and device for controlling growing process of single crystal silicon ingot | |
TW201016904A | Procedure for in-situ determination of thermal gradients at the crystal growth front | |
TW201016903A | Reversed action diameter control in a semiconductor crystal growth system | |
US2010024716A1 | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process | |
EP1115918A2 | Enhanced n-type silicon material for epitaxial wafer substrate and method of making same | |
US6511921B1 | Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate |