| # | Country | Total Patents | |
|---|---|---|---|
| #1 | China | 7 | |
| #2 | Republic of Korea | 6 | |
| #3 | United States | 5 | |
| #4 | WIPO (World Intellectual Property Organization) | 4 | |
| #5 | EPO (European Patent Office) | 2 | |
| #6 | Taiwan | 2 | |
| #7 | India | 1 | |
| #8 | Japan | 1 |
| # | Industry | |
|---|---|---|
| #1 | Machines | |
| #2 | Surface technology and coating |
| # | Technology | |
|---|---|---|
| #1 | Unspecified technologies | |
| #2 | Single-crystal-growth | |
| #3 | Working stone |
| # | Name | Total Patents |
|---|---|---|
| #1 | Bender David L | 19 |
| #2 | Swaminathan Tirumani N | 9 |
| Publication | Filing date | Title |
|---|---|---|
| US2014144371A1 | Heat Shield For Improved Continuous Czochralski Process | |
| US2014144372A1 | Weir for improved crystal growth in a continuous Czochralski process | |
| JP2012001435A | System for continuous growth of single crystal silicon | |
| US2005217656A1 | Method and apparatus for cutting ultra thin silicon wafers | |
| US7635414B2 | System for continuous growing of monocrystalline silicon |