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SICC SCIENCE & TECH CO LTD

Overview
  • Total Patents
    101
  • GoodIP Patent Rank
    14,161
  • Filing trend
    ⇧ 560.0%
About

SICC SCIENCE & TECH CO LTD has a total of 101 patent applications. It increased the IP activity by 560.0%. Its first patent ever was published in 2016. It filed its patents most often in China and Taiwan. Its main competitors in its focus markets surface technology and coating, materials and metallurgy and measurement are JIANGSU BAIERTE OPTOELECTRONIC DEVICES CO LTD, HEBEI TONGGUANG CRYSTAL CO LTD and JIANGXI SAIWEI LDK SOLAR ENERGY HIGH-TECH CO LTD.

Patent filings in countries

World map showing SICC SCIENCE & TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 100
#2 Taiwan 1

Patent filings per year

Chart showing SICC SCIENCE & TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Gao Chao 48
#2 Zong Yanmin 33
#3 Zhang Hongyan 22
#4 Liu Jiapeng 21
#5 Li Jialin 21
#6 Li Xia 19
#7 Li Changjin 19
#8 Dou Wentao 18
#9 Ning Xiuxiu 16
#10 Liang Qingrui 15

Latest patents

Publication Filing date Title
CN111945219A Silicon carbide crystal growth method and device
CN112067663A Method and device for detecting resistivity of high-purity silicon carbide crystal
CN112051452A High-precision graphite crucible resistivity testing device and method
CN111962157A Healing method of silicon carbide crystal micropipe, silicon carbide product and application
CN112048769A Device for healing silicon carbide crystal micropipe and application
CN112051186A Method and device for measuring volume density of graphite crucible without pollution
CN111962147A High-efficiency silicon carbide crystal growth method and device
CN111979578A Heat radiation reflection device for producing silicon carbide single crystal and preparation method and application thereof
CN111926385A Silicon carbide single crystal and PVT method production method and application thereof
CN111892055A Silicon carbide powder doped with rare earth elements and preparation method thereof
CN111908472A Silicon carbide powder doped with rare earth elements and preparation method and application thereof
CN111625997A Crystal cutting process optimization method and device
CN111521103A Method and device for detecting flatness of crystal bar
CN111472044A Preparation method and device of high-quality silicon carbide single crystal
CN111623067A Damping device for vacuum reaction furnace and crystal growth furnace
CN111695287A Method and equipment for predicting overall temperature field in SiC single crystal furnace
CN111545922A Processing method of silicon carbide crystal
CN111270305A High-quality n-type silicon carbide and preparation method thereof
CN111392728A Raw material for producing silicon carbide crystal and preparation method and application thereof
CN111400862A Method, device and equipment for predicting crystal thermal field distribution