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SHANGHAI XINYUANJI SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    12
  • GoodIP Patent Rank
    143,784
  • Filing trend
    ⇩ 100.0%
About

SHANGHAI XINYUANJI SEMICONDUCTOR TECH CO LTD has a total of 12 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2014. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are INFOCITY INC, XI AN SHENGUANG ANRUI PHOTOELECTRIC TECHNOLOGY CO LTD and IPOWER SEMICONDUCTOR.

Patent filings in countries

World map showing SHANGHAI XINYUANJI SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 12

Patent filings per year

Chart showing SHANGHAI XINYUANJI SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Hao Maosheng 12
#2 Yuan Genru 12
#3 Zhang Nan 11
#4 Chen Peng 2
#5 Ma Yanhong 2
#6 Xi Ming 1
#7 Ma Yue 1
#8 Hu Jianzheng 1

Latest patents

Publication Filing date Title
CN112038396A Gallium nitride Schottky diode and preparation method thereof
CN111430237A Semiconductor device structure, Schottky diode and preparation method thereof
CN110620034A Semiconductor structure, device and preparation method thereof
CN111613696A MICRO LED structure and manufacturing method thereof
CN111613703A Photoelectric isolation structure of semiconductor device with thin film structure and manufacturing method thereof
CN108281525A A kind of compound substrate, semiconductor device structure and preparation method thereof
CN106784217A Compound substrate, semiconductor device structure and preparation method thereof
CN106783533A Nitride semiconductor structure containing Al and its epitaxial growth method
CN108023003A Semiconductor device structure with N through hole electrodes
CN107123713A A kind of device architecture of suitable monochromatic light LED die level encapsulation
CN106558639A The LED component and its cutting unit and manufacture method of wafer level encapsulation
CN111129238A III-V group nitride semiconductor epitaxial wafer, device comprising epitaxial wafer and preparation method of device