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SHANGDONG HUAGUANG OPTOELECTRONICS CO LTD

Overview
  • Total Patents
    14
About

SHANGDONG HUAGUANG OPTOELECTRONICS CO LTD has a total of 14 patent applications. Its first patent ever was published in 2009. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are JIJIA SCIENCE & TECHNOLOGY CO, YAXU ELECTRONIC TECHNOLOGY JIANGSU CO LTD and MIENO FUMITAKE.

Patent filings in countries

World map showing SHANGDONG HUAGUANG OPTOELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing SHANGDONG HUAGUANG OPTOELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Xiangang Xu 10
#2 Shuqiang Li 6
#3 Shuang Qu 4
#4 Zhongxiang Ren 4
#5 Qiuxia Zhang 3
#6 Chengxin Wang 3
#7 Wei Xia 3
#8 Guolei Yu 2
#9 Peixu Li 2
#10 Xueliang Zhu 2

Latest patents

Publication Filing date Title
CN102082391A Optical fiber coupling semiconductor laser output light band indicating device
CN102079015A Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip
CN102064168A Electroluminescent/photoinduced mixed white LED chip and manufacturing method
CN102064169A Single-chip white-light LED and preparation method thereof
CN102064170A White LED chip and preparation method thereof
CN102082393A Method for shaping optical fiber with double film-plated cambered surfaces of semiconductor laser
CN102064164A Freely combined lamp wick of flip-chip power LED tube core
CN102064088A Method for preparing sapphire-graph substrate by dry method and wet method
CN102005519A Method for packaging high-power white LED with high luminous efficiency
CN102005518A Method for preparing pyramidal patterned substrate through twice corrosion
CN101872719A Epitaxial growth method for improving In component uniformity of InGaN quantum well
CN101702418A GaN-based LED chip extending and growing method for reducing dislocation defects
CN101540361A Preparation method of AlGaInP LED grown on silicon base
CN101540359A Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof