Learn more

CHONGQING WEITESEN ELECTRONIC TECH CO LTD

Overview
  • Total Patents
    13
  • GoodIP Patent Rank
    135,129
About

CHONGQING WEITESEN ELECTRONIC TECH CO LTD has a total of 13 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are LIN SHIAN-JYH, LATTICEPOWER JIANGXI CO LTD and KONO YOSHINOBU.

Patent filings in countries

World map showing CHONGQING WEITESEN ELECTRONIC TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 13

Patent filings per year

Chart showing CHONGQING WEITESEN ELECTRONIC TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 He Jun 9
#2 Liu Min 9
#3 Zheng Liu 4
#4 He Zhi 2
#5 Deng Xiaochuan 1

Latest patents

Publication Filing date Title
CN111489961A Preparation method of SiC-MOSFET gate with gate oxide at corner of trench and high field strength bearing capacity
CN111477679A Preparation method of asymmetric groove type SiC-MOSFET gate
CN111490098A Groove type SiC IGBT structure and preparation method thereof
CN111489963A Preparation method of SiC-MOSFET gate with thick gate oxide layer at corner of trench
CN111489962A Preparation method of thick bottom groove
CN111180316A Silicon carbide thick bottom oxide layer groove MOS preparation method
CN111276545A Novel groove silicon carbide transistor device and manufacturing method thereof
CN111029410A Diode with junction barrier Schottky structure and manufacturing method thereof
CN111129155A Preparation method of low-gate-drain capacitance silicon carbide DI-MOSFET
CN112071740A Method for preparing silicon carbide structure by picosecond laser irradiation
CN109509706A A kind of preparation method and silicon carbide diode of silicon carbide diode
CN109473485A Silicon carbide diode and preparation method thereof
CN108847384A A method of in silicon carbide-based on piece growth of oxygen layer