| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 6 | |
| #2 | United States | 5 | |
| #3 | WIPO (World Intellectual Property Organization) | 5 | |
| #4 | Australia | 3 | |
| #5 | Taiwan | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Machines | |
| #3 | Micro-structure and nano-technology | |
| #4 | Optics | |
| #5 | Materials and metallurgy | |
| #6 | Electrical machinery and energy | |
| #7 | Environmental technology |
| # | Name | Total Patents |
|---|---|---|
| #1 | Zhirnov Victor Vladimirovich | 6 |
| #2 | Herr Daniel Joseph Christian | 5 |
| #3 | Herr Daniel J C | 5 |
| #4 | Ober Christopher | 4 |
| #5 | Gleason Karen K | 4 |
| #6 | Herr Daniel | 4 |
| #7 | Frechet Jean M | 3 |
| #8 | Zhirnov Victor V | 3 |
| #9 | Herr Daniel Joseph | 3 |
| #10 | Joy David Charles | 2 |
| Publication | Filing date | Title |
|---|---|---|
| US2014264501A1 | Depletion-mode field-effect transistor-based phototransitor | |
| US7144803B2 | Methods of forming boron carbo-nitride layers for integrated circuit devices | |
| AU2003277190A8 | Nanostructures including controllably positioned and aligned synthetic nanotubes, and related methods | |
| US2004132254A1 | Deterministically doped field-effect devices and methods of making same | |
| US6664559B1 | Supermolecular structures and devices made from same | |
| US6509138B2 | Solventless, resistless direct dielectric patterning |