QUANTUM SEMICONDUCTOR LLC has a total of 46 patent applications. It increased the IP activity by 200.0%. Its first patent ever was published in 2000. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, environmental technology and audio-visual technology are TESSERA TECH HUNGARY KFT, OPTIZ INC and KOIKE HIDETOSHI.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 22 | |
#2 | WIPO (World Intellectual Property Organization) | 9 | |
#3 | EPO (European Patent Office) | 8 | |
#4 | China | 6 | |
#5 | Australia | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Environmental technology | |
#3 | Audio-visual technology | |
#4 | Optics | |
#5 | Basic communication technologies | |
#6 | Micro-structure and nano-technology | |
#7 | Measurement |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Reduction of greenhouse gas emissions | |
#3 | Television | |
#4 | Optical systems | |
#5 | Devices using light amplification | |
#6 | Nanostructure applications | |
#7 | Code conversion | |
#8 | Measuring light |
# | Name | Total Patents |
---|---|---|
#1 | Augusto Carlos J R P | 32 |
#2 | Augusto Carlos Jorge R P | 8 |
#3 | Diniz Pedro N C | 7 |
#4 | Augusto Carlos Jorge | 3 |
#5 | Forester Lynn | 3 |
#6 | Diniz Pedro Nuno Cruz | 2 |
#7 | Augusto Carlos | 2 |
#8 | Augusto Carios Jorge | 1 |
Publication | Filing date | Title |
---|---|---|
WO2017059146A1 | Electrical devices making use of counterdoped junctions | |
WO2016183091A1 | Pixel for use with light having wide intensity range | |
CN105874613A | Superlattice materials and applications | |
WO2009103048A1 | Dual photo-diode cmos pixels | |
US2008150782A1 | Multi-mode ADC and its application to CMOS image sensors | |
US2006261996A1 | Multi-mode ADC and its application to CMOS image sensors | |
CN101002326A | Photonic devices monolithically integrated with cmos | |
EP1794797A1 | Layouts for the monolithic integration of cmos and deposited photonic active layers | |
US2005255649A1 | Method of fabricating heterojunction devices integrated with CMOS | |
CN1998229A | Imaging devices operable with multiple aspect ratios | |
US2005151128A1 | Wavelength selective photonics device | |
WO2004054235A1 | Circuitry for image sensors with avalanche photodiodes | |
US7023030B2 | Misfet | |
AU2003270212A1 | Light-sensing device | |
US6674099B1 | Misfet |