|
RU2541416C1
|
|
METHOD OF PRODUCING SILICON p-i-n PHOTODIODE
|
|
RU2545295C1
|
|
Method for chemical-mechanical polishing of gallium arsenide plates
|
|
RU2539791C1
|
|
Cooled photodetector base
|
|
RU2542894C1
|
|
Polishing etch composition for mercury cadmium telluride
|
|
RU2537087C1
|
|
METHOD OF MANUFACTURING SILICON p-i-n PHOTODIODE
|
|
RU2532594C1
|
|
METHOD OF PRODUCING SILICON p-i-n PHOTODIODE
|
|
RU2537089C1
|
|
Method for hybridisation of reading lsi chips and photosensitive element array of photodetector devices
|
|
RU2529285C1
|
|
Combined regenerative heat exchanger
|
|
RU2529200C1
|
|
Method of measuring quantum efficiency and dark current of photosensitive elements in infrared photodetector array
|
|
RU2526489C1
|
|
Method of assembling infrared photodetector
|
|
RU2525819C2
|
|
Method of filling closed microcryogenic systems with coolant with preliminary washing inner cavity
|
|
RU2519024C1
|
|
Multielement infrared photodetector
|
