NANO SILICON PTE LTD has a total of 14 patent applications. Its first patent ever was published in 2001. It filed its patents most often in United States and Singapore. Its main competitors in its focus markets basic communication technologies, semiconductors and telecommunications are SEMISOUTH LAB INC, SS SC IP LLC and DSM SOLUTIONS INC.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 9 | |
#2 | Singapore | 5 |
# | Industry | |
---|---|---|
#1 | Basic communication technologies | |
#2 | Semiconductors | |
#3 | Telecommunications |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Demodulation | |
#3 | Code conversion | |
#4 | Pulse technique | |
#5 | Automatic control of oscillations | |
#6 | Multiplex communication |
# | Name | Total Patents |
---|---|---|
#1 | Cai Jun | 7 |
#2 | Hu David | 7 |
#3 | Hong Sair Lim | 1 |
#4 | Wu Guosheng | 1 |
#5 | Bian Jiang | 1 |
#6 | Jun Ho Cho | 1 |
#7 | Jiao Meng Cao | 1 |
#8 | Cao Jiao Meng | 1 |
#9 | Lim Hong Sair | 1 |
#10 | Cho Jun Ho | 1 |
Publication | Filing date | Title |
---|---|---|
US2005200392A1 | Output buffer with controlled slew rate for driving a range of capacitive loads | |
SG117467A1 | Very high speed arbitrary number of multiple signal multiplexer | |
US2004136483A1 | Clock recovery method by phase selection | |
US6762560B1 | High speed over-sampler application in a serial to parallel converter | |
US6589833B2 | ESD parasitic bipolar transistors with high resistivity regions in the collector | |
US6507090B1 | Fully silicide cascaded linked electrostatic discharge protection | |
US6444510B1 | Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks |