Method for the production of a hetero-bipolar transistor
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Production of a semiconductor structure for a semiconductor laser, especially a DFB laser comprises epitaxially forming a laser waveguide layer on a substrate, forming a lattice structure in the waveguide and further processing
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Tuning electro-optical transmitter arrangement involves tuning light source depending on detected parameter of modulated light signal from modulator receiving bit pattern and continuous light signal
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Electronic driver device has different components within driver end stage IC and second IC manufactured via differing semiconductor technologies
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Optical data signals transmission arrangement, has light entrance/light exit zone on surface of electro-optical component
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Arrangement for generating optical data signals has regulator connected to modulator to detect operating parameter as measure of incident light intensity, to light source to control light intensity
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Module with a light guide and method of manufacture
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Arrangement comprising at least two different electronic semiconductor circuits
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Method of manufacturing a hetero bipolar transistor
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Heterojunction bipolar transistor
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Integrated circuit arrangement
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Arrangement for sending or receiving optical signals
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Integrated circuit arrangement for switching a current of a constant current source
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Arrangement of a system for data transmission
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Arrangement with at least two different electronic semiconductor circuits and use of the arrangement for rapid data transmission
