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LIN QINGHUANG

Overview
  • Total Patents
    24
About

LIN QINGHUANG has a total of 24 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, optics and macromolecular chemistry and polymers are TAIWAN INTEGRATED CIRCUIT MANU, GREEN BRUCE M and ARNOLD JOHN C.

Patent filings in countries

World map showing LIN QINGHUANGs patent filings in countries
# Country Total Patents
#1 United States 24

Patent filings per year

Chart showing LIN QINGHUANGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lin Qinghuang 24
#2 Neumayer Deborah A 4
#3 Pfeiffer Dirk 3
#4 Mehta Sanjay 2
#5 Sooriyakumaran Ratnam 2
#6 Chen Shyng-Tsong 2
#7 Shobha Hosadurga 2
#8 Spooner Terry A 1
#9 Fletcher Benjamin L 1
#10 Zhang Ying 1

Latest patents

Publication Filing date Title
US2013299883A1 Printed transistor and fabrication method
US2013062732A1 Interconnect structures with functional components and methods for fabrication
US2013032945A1 Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication
US2012261829A1 Middle of line structures
US2012261788A1 Method for forming self-aligned airgap interconnect structures
US2012032336A1 Self-aligned permanent on-chip interconnect structure formed by pitch splitting
US2011304053A1 Interconnect structure and method of fabricating
US2011074044A1 Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication
US2011042790A1 Multiple patterning using improved patternable low-k dielectric materials
US2010319971A1 Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating
US2009174067A1 Airgap-containing interconnect structure with patternable low-k material and method of fabricating
US2009079075A1 Interconnect structures with patternable low-k dielectrics and method of fabricating same
US2009079076A1 Patternable dielectric film structure with improved lithography and method of fabricating same