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JIANGSU FULEDE SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    16
  • GoodIP Patent Rank
    105,550
About

JIANGSU FULEDE SEMICONDUCTOR TECH CO LTD has a total of 16 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and basic materials chemistry are SHIBATA KENJI, JIANGSU LUOHUA NEW MAT CO LTD and NORTH CAROLINA MICROELECTRON.

Patent filings in countries

World map showing JIANGSU FULEDE SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 16

Patent filings per year

Chart showing JIANGSU FULEDE SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Bin 16
#2 He Xianhan 16
#3 Sun Quan 15
#4 Ge Zhuang 13
#5 Ouyang Peng 13
#6 Zhang Enrong 8
#7 Ma Jingwei 4
#8 Dai Hongxing 3
#9 Zhou Yiliang 2
#10 Guo Jianyue 1

Latest patents

Publication Filing date Title
CN112164687A Copper-clad ceramic substrate and preparation method thereof
CN111945139A Nickel plating method for copper-clad ceramic substrate
CN111908924A Silicon nitride ceramic chip interface modification method and copper-clad ceramic substrate preparation method
CN111933610A Metal ceramic substrate with buffer layer and preparation method thereof
CN111785644A Method for preparing pre-welded copper-clad ceramic substrate through laser cladding
CN111785643A Titanium foil chemical thinning method
CN111751177A Preparation method of copper-clad ceramic substrate tensile test sample
CN111593349A Chemical milling liquid for preparing ultrathin titanium foil and milling method
CN111653486A Method for improving thermal shock reliability of copper-clad ceramic substrate
CN111548196A Surface treatment method for aluminum nitride ceramic substrate
CN111621787A Etching liquid system and method for etching aluminum nitride substrate
CN111627822A Etching solution and etching method for active metal layer of copper-clad ceramic substrate
CN111592382A Surface roughening method for aluminum nitride ceramic substrate
CN111403347A Copper-ceramic interface structure of high-reliability silicon nitride copper-clad ceramic substrate and preparation method thereof
CN110993485A Surface passivation method of silicon nitride ceramic copper-clad substrate
CN109360791A A kind of AMB straight forming method without etching