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JIANGSU AKCOME ENERGY RES INSTITUTE CO LTD

Overview
  • Total Patents
    11
  • GoodIP Patent Rank
    154,356
About

JIANGSU AKCOME ENERGY RES INSTITUTE CO LTD has a total of 11 patent applications. Its first patent ever was published in 2018. It filed its patents most often in China. Its main competitors in its focus markets environmental technology, semiconductors and electrical machinery and energy are SOLAR IMPLANT TECHNOLOGIES INC, CHENGDU YEFAN TECH CO LTD and CORNFELD ARTHUR.

Patent filings in countries

World map showing JIANGSU AKCOME ENERGY RES INSTITUTE CO LTDs patent filings in countries
# Country Total Patents
#1 China 11

Patent filings per year

Chart showing JIANGSU AKCOME ENERGY RES INSTITUTE CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Yi Zhikai 11
#2 Guo Xiaoyong 11
#3 Wang Yongqian 7
#4 Wang Tao 7
#5 Ling Jun 5
#6 Zhang Chaoxiong 1
#7 Wang Ming 1

Latest patents

Publication Filing date Title
CN112117335A Method for printing welding points on MBB main gate of crystalline silicon heterojunction solar cell
CN111883621A TCO (transparent conductive oxide) coating process method of high-efficiency crystalline silicon heterojunction solar cell
CN111739986A Method for improving short-circuit current of high-efficiency crystalline silicon heterojunction solar cell
CN111192813A RPD equipment maintenance method for TCO coating of heterojunction solar cell
CN110534463A A kind of efficient silicon/crystalline silicon heterojunction solar battery silicon chip cleaning device and method
CN110459639A Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film
CN110310999A The hetero-junction solar cell structure and preparation method thereof of gradual change lamination TCO conductive film
CN109411551A Efficient silicon/crystalline silicon heterojunction solar battery electrode structure of multiple deposition and preparation method thereof
CN109449227A Silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer and preparation method thereof
CN109638101A The emitter structure and preparation method thereof of the double-deck amorphous silicon doped layer solar cell
CN109638094A Efficient heterojunction battery intrinsic amorphous silicon passivation layer structure and preparation method thereof