| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 3 | |
| #2 | China | 2 | |
| #3 | Taiwan | 2 | |
| #4 | WIPO (World Intellectual Property Organization) | 2 | |
| #5 | Australia | 1 | |
| #6 | EPO (European Patent Office) | 1 | |
| #7 | Japan | 1 | |
| #8 | Singapore | 1 |
| # | Industry | |
|---|---|---|
| #1 | Environmental technology | |
| #2 | Semiconductors | |
| #3 | Optics |
| # | Name | Total Patents |
|---|---|---|
| #1 | Lim Swee | 8 |
| #2 | Ahmari David | 7 |
| #3 | Rai Shiva | 7 |
| #4 | Forbes David | 7 |
| #5 | Hartmann Quesnell | 5 |
| #6 | Ahmari David A | 1 |
| #7 | David Forbes | 1 |
| #8 | Cockerill Timothy | 1 |
| #9 | David Ahmari | 1 |
| #10 | Shiva Rai | 1 |
| Publication | Filing date | Title |
|---|---|---|
| EP2865016A1 | Manufacturing semiconductor-based multi-junction photovoltaic devices | |
| WO02103803A1 | Inp heterojunction bipolar transistor with intentionally compressivley missmatched base layer | |
| TW543122B | Transistor with intentionally tensile mismatched base layer | |
| US6525349B2 | Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD | |
| TW495846B | Electrically inactive passivating layer for semiconductor devices |