| # | Country | Total Patents | |
|---|---|---|---|
| #1 | WIPO (World Intellectual Property Organization) | 5 | |
| #2 | EPO (European Patent Office) | 4 | |
| #3 | China | 2 | |
| #4 | Poland | 2 | |
| #5 | Hong Kong | 1 |
| # | Industry | |
|---|---|---|
| #1 | Optics | |
| #2 | Semiconductors | |
| #3 | Micro-structure and nano-technology | |
| #4 | Measurement | |
| #5 | Chemical engineering | |
| #6 | Environmental technology |
| # | Technology | |
|---|---|---|
| #1 | Devices using light amplification | |
| #2 | Semiconductor devices | |
| #3 | Nanostructure applications | |
| #4 | Analysing materials | |
| #5 | Water treatment | |
| #6 | Chemical or physical processes |
| # | Name | Total Patents |
|---|---|---|
| #1 | Grzegory Izabella | 7 |
| #2 | Porowski Sylwester | 7 |
| #3 | Suski Tadeusz | 7 |
| #4 | Perlin Piotr | 6 |
| #5 | Skierbiszewski Czeslaw | 6 |
| #6 | Bockowski Michal | 6 |
| #7 | Wisniewski Przemyslaw | 6 |
| #8 | Leszczynski Michal | 6 |
| #9 | Siekacz Marcin | 5 |
| #10 | Feduniewicz Anna | 4 |
| Publication | Filing date | Title |
|---|---|---|
| WO2009139654A1 | METHOD OF MANUFACTURING OF MAGNESIUM DOPED InxAlyGa1-x-yN EPITAXIAL LAYER OF p-TYPE CONDUCTIVITY AND MANUFACTURING OF MULTILAYER SEMICONDUCTOR STRUCTURES COMPRISING SUCH LAYER | |
| WO2007040415A1 | Method of chemical reactions conduction and chemical reactor | |
| PL372954A1 | High-pressure ultrasonic method for manufacture and process nano-granular and biological materials as well as the appliance to employ this method | |
| PL371753A1 | Method for manufacture of admixture epitaxial layers InxAlyGa1-x-yN, InxAlyGa1-x-yN admixture epitaxial layer and semiconductor multilayer structure containing InxAlyGa1-x-yN epitaxial layer for which 1˛ x > 0.001 and 0.999 ˛ y > 0 |