INNOLUME GMBH has a total of 17 patent applications. Its first patent ever was published in 2002. It filed its patents most often in EPO (European Patent Office), United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets optics, micro-structure and nano-technology and semiconductors are OPTICAL MEASUREMENT TECHNOLOGY, JOHNSON RALPH H and BEHFAR ALEX A.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 7 | |
#2 | United States | 7 | |
#3 | WIPO (World Intellectual Property Organization) | 3 |
# | Industry | |
---|---|---|
#1 | Optics | |
#2 | Micro-structure and nano-technology | |
#3 | Semiconductors | |
#4 | Surface technology and coating | |
#5 | Machines |
# | Technology | |
---|---|---|
#1 | Devices using light amplification | |
#2 | Nanostructure applications | |
#3 | Semiconductor devices | |
#4 | Optical systems | |
#5 | Unspecified technologies | |
#6 | Single-crystal-growth |
# | Name | Total Patents |
---|---|---|
#1 | Livshits Daniil | 12 |
#2 | Krestnikov Igor | 12 |
#3 | Gubenko Alexey | 11 |
#4 | Kovsh Alexey | 10 |
#5 | Mikhrin Sergey | 10 |
#6 | Zhukov Alexey | 3 |
#7 | Wojcik Greg | 3 |
#8 | Ledentsov Nikolai | 2 |
#9 | Shchukin Vitaly | 2 |
#10 | Ledentsov Nikolai Nikolaevich | 2 |
Publication | Filing date | Title |
---|---|---|
WO2014125116A1 | Single-step-grown transversely coupled distributed feedback laser | |
WO2013010058A1 | Adiabatic mode-profile conversion by selective oxidation for photonic integrated circuit | |
EP2371044A2 | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser | |
US2008180674A1 | Optical transmission system | |
US2008079016A1 | Long-wavelength resonant-cavity light-emitting diode | |
US2007189348A1 | Laser source with broadband spectrum emission | |
US2007127531A1 | Laser source with broadband spectrum emission | |
US2005271092A1 | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer | |
EP1386348A2 | Method of forming a lattice-mismatched semiconductor layer |