| # | Country | Total Patents | |
|---|---|---|---|
| #1 | Australia | 2 | |
| #2 | Germany | 2 | |
| #3 | EPO (European Patent Office) | 2 | |
| #4 | United States | 2 | |
| #5 | WIPO (World Intellectual Property Organization) | 2 | |
| #6 | China | 1 |
| # | Industry | |
|---|---|---|
| #1 | Optics | |
| #2 | Micro-structure and nano-technology | |
| #3 | Semiconductors |
| # | Technology | |
|---|---|---|
| #1 | Devices using light amplification | |
| #2 | Nanostructure applications | |
| #3 | Semiconductor devices |
| # | Name | Total Patents |
|---|---|---|
| #1 | Ebeling Karl Joachim | 7 |
| #2 | Debernardi Pierluigi | 2 |
| #3 | Ostermann Johannes Michael | 2 |
| #4 | Grabherr Martin | 1 |
| #5 | Jaeger Roland | 1 |
| #6 | King Roger | 1 |
| #7 | Wiedenmann Dieter | 1 |
| #8 | Ebeling Karl J | 1 |
| Publication | Filing date | Title |
|---|---|---|
| DE102004002757A1 | Composite semiconductor esp. for use in optoelectronics has an insulation layer containing aluminum nitride | |
| DE10353951A1 | Polarization control of vertical diode lasers by a monolithically integrated surface grid | |
| US6548835B1 | Optoelectronic device having a highly conductive carrier tunneling current aperture | |
| US6570905B1 | Vertical cavity surface emitting laser with reduced parasitic capacitance |