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HSIEH FU-YUAN

Overview
  • Total Patents
    56
About

HSIEH FU-YUAN has a total of 56 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors are RIN EISHA KK, GUANGDONG ZHINENG TECH CO LTD and BULUCEA CONSTANTIN.

Patent filings in countries

World map showing HSIEH FU-YUANs patent filings in countries
# Country Total Patents
#1 United States 56

Patent filings per year

Chart showing HSIEH FU-YUANs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Hsieh Fu-Yuan 56

Latest patents

Publication Filing date Title
US2014077290A1 Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process
US8564058B1 Super-junction trench MOSFET with multiple trenched gates in unit cell
US2013234238A1 Semiconductor power device integrated with ESD protection diodes
US2012261737A1 Trench MOSFET with trenched floating gates and trenched channel stop gates in termination
US2012211831A1 Trench MOSFET with trenched floating gates in termination
US2012187477A1 Super-junction trench MOSFET with multiple trenched source-body contacts
US2013256786A1 Trench mosfet with shielded electrode and avalanche enhancement region
US2013234237A1 Semiconductor power device integrated with clamp diodes having dopant out-diffusion suppression layers
US2013207172A1 Trench MOSFET having a top side drain
US2013168760A1 Trench MOSFET with resurf stepped oxide and diffused drift region
US2013168761A1 Semiconductor power device having improved termination structure for mask saving
US2013168764A1 Trench semiconductor power device having active cells under gate metal pad
US2013113038A1 Trench mosfet with split trenched gate structures in cell corners for gate charge reduction
US2012032261A1 Trench MOSFET having floating dummy cells for avalanche improvement
US2013092976A1 Semiconductor power device integrated with improved gate source ESD clamp diodes
US2013075810A1 Semiconductor power devices integrated with a trenched clamp diode
US2013075809A1 Semiconductor power device with embedded diodes and resistors using reduced mask processes
US2011284954A1 Low Qgd trench MOSFET integrated with schottky rectifier
US2013020577A1 MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures
US2013020576A1 Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures