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HIKARI GIJUTSU KENKYU KAIHATSU

Overview
  • Total Patents
    203
About

HIKARI GIJUTSU KENKYU KAIHATSU has a total of 203 patent applications. Its first patent ever was published in 1987. It filed its patents most often in Japan. Its main competitors in its focus markets optics, micro-structure and nano-technology and semiconductors are HIKARI KEISOKU GIJIYUTSU KAIHA, AGILITY COMMUNICATIONS INC and OPTICAL MEASUREMENT TECHNOLOGY.

Patent filings in countries

World map showing HIKARI GIJUTSU KENKYU KAIHATSUs patent filings in countries
# Country Total Patents
#1 Japan 203

Patent filings per year

Chart showing HIKARI GIJUTSU KENKYU KAIHATSUs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Akita Kenzo 25
#2 Sugimoto Yoshimasa 25
#3 Tanetani Mototaka 23
#4 Hidaka Hiromi 19
#5 Tamura Masao 17
#6 Toyoda Yukio 14
#7 Sugiyama Naoharu 14
#8 Sasaki Masahiro 14
#9 Yoshida Kiyoteru 13
#10 Wakabayashi Shinichi 12

Latest patents

Publication Filing date Title
JPH08124884A Method for forming extremely fine pattern of compound semiconductor
JPH08264443A Formation of microminiature buried structure of compound semiconductor
JPH08157299A Method for growing aluminum compound semiconductor crystal
JPH0897188A Semiconductor etching device
JPH0888185A Semiconductor crystal growth method
JPH0886985A Multiple quantum well optical modulation element
JPH0864530A Selective growing method
JPH0855799A Crystal growth method
JPH088183A Manufacture of semiconductor element
JPH088184A Manufacture of semiconductor element
JPH07273084A Manufacture of quantum fine wire structure
JPH07277882A Apparatus for supplying raw material for crystal growth
JPH07273032A Growth method of semiconductor crystal
JPH07263357A Manufacture of iii-v compound thin film
JPH07240370A Method of manufacturing iii-v group compound thin film
JPH07231083A Semiconductor element
JPH07226530A Optical semiconductor element
JPH07221032A Semiconductor substrate and its manufacture
JPH07211639A Method for inactivating surface of si (100) substrate
JPH07211638A Method for inactivating surface of si (100) substrate